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The Mechanism of the Current Transport in the Iridium Silicide – Silicon (Irsi-Si) Contacts. P. 109–114

Версия для печати

Section: Physics. Mathematics. Informatics

UDC

621.383.5

Authors

Ibragimov Guseyn Behbud,
Institute of Physics of Azerbaijan National Academy of Sciences (Baku, Azerbaijan Republic)
е- mail: İ_Quseyn.fizik@mail.ru
Kerimov Elchin Akhmed,
National Aerospace Agency of Azerbaijan (Baku, Azerbaijan Republic)
е-mail: E_Kerimov.fizik@mail.ru

Abstract

Constructing of the high-quality high-speed semiconductor devices and integrated circuits requires the introduction of new materials to the technology of their production. The most promising of these materials are suicides - silicon compounds with more electropositive elements. These compounds can be prepared by reacting in the solid phase at the temperatures ranging approximately from one to onehalf of the melting temperature of the metal on Kelvin. Silicides have a high conductivity of metallic nature, high temperature stability and superior to any heavily doped semiconductor layer by these properties. Stable and reliable characteristics of iridium silicide contacts - silicon (IrSi-Si) have led to widespread silicides as materials for ohmic contacts, gates in metal-oxide-semiconductor transistors (MIS), materials for optical data storage, photodetectors, operating in the infrared region of the spectrum, and so on. We investigated the electrical properties of structures IrSi - Si, as obtained by thermal evaporation and by magnetron evaporation. It is established that the heat treatment of the structure up to 250 ° C does not cause irreversible changes in the electrical properties IrSi - Si. The barrier height of φB of nearly ideal (n <1,07) the Schottky diodes is in the range 0,88 – 0,94 eV. At the same time, the results of our measurements show that for φB of IrSi - Si, obtained by magnetron sputtering, is 0,94 eV. Perhaps for this reason, the breakdown voltage does not depend on the thickness of IrSi, obtained by magnetron sputtering, indicating homogeneity of the contact IrSi - Si. Experiments with diodes of different diameters showed that the direct and reverse currents are proportional to the active area.

Keywords

photo diode, Schottky barrier, Shottky coordinates, magnetron sputtering, saturation current, direct currents, reverse currents
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